Faculty At Electronics And Communication Department



Sangeeta Singh
Sangeeta Singh
Assistant Professor
Basic Information Research Interest:-Beyond CMOS Devices Green Electronics Steep switching transistors
Email :- sangeeta.singh@nitp.ac.in
Phone :-

Subjects Teaching in Department
  1. Elements of Electronics Engineering EC-106
  2. Analysis and Design of Digital Integrated Circuits EC662
Educational Qualification
  1. Ph.D. - Indian Institute of Information Technology, Design and Manufacturing, Jabalpur (IIITDM Jabalpur) - 2016
  2. M.Tech - Indian Institute of Information Technology, Gwalior - 2012
  3. B.Tech - Shri Govindram Seksaria Institute of Technology & Science (SGSITS) Indore - 2009
    Current Administrative Responsibility
    1. PI T&P, ECE form Aug, 2018
    2. PI Microelectronics and VLSI Lab from Aug, 2018
    3. Member, DPC from Aug, 2018
      Past Administrative Responsibility
      1. Faculty coordinator for Training & Placements at Indian Institute of Information Technology, Kota since 13/07/2017 to 27/07/2018
      2. Nodal Officer for National Academic Depository at Indian Institute of Information Technology, Kota since 12/05/2017 to 27/07/2018
        Work Experiences
        1. As Assistant Professor Type-1 (On Contract) at Indian Institute of Information Technology, Kota from 30Jan,2017 to 27July, 2018
          Journals
          1. S. Singh, S. Dubey, S. Kharwar and P. N. Kondekar, Strained Si on Insulator as Potential Material for Forced Stacked Multi-threshold FinFET Based Inverter Considering Ultra Low-Power Applications. Transactions on Electrical and Electronic Materials . - 2019,.
          2. S Singh, P Kondekar, R Sinha, Impact of PZT Gate-Stack Induced NegativeCapacitance on Analog/RF Figures-of-merits of Electrostatically DopedFerroelectric Schottky Barrier Tunnel FET. IET Circuits, Devices & Systems. , Dec - 2018,.
          3. S. Singh, P. N. Kondekar, and N. K. Jaiswal, Comparative Analysis of T-Gate and L-Gate Dielectric Modulated Schottky Tunneling Source Impact Ionization MOS for Label-Free Detection of Toxic Gases. Journal of Nanoelectronics and Optoelectronics . 13(4) - 2018,501-508, .
          4. S. Singh, P. N. Kondekar and Arun P. Singh, , Investigation of Analog/RF Figures-of-merits of Charge Plasma Schottky Barrier Tunnel FET. Journal of Nanoelectronics and Optoelectronics . 12(4) - 2017,365-374, .
          5. S. Singh and P. N. Kondekar, Circuit Performance & Sensitivity Analysis of Charge Plasma based Super-Steep Negative Capacitance Junctionless Tunnel Field Effect Transistor. Journal of Nanoelectronics and Optoelectronics . 12(5) - 2017,442-451, .
          6. S. Singh, A. Singh and P. N. Kondekar, A Novel Self-Aligned Charge Plasma Schottky Barrier Tunnel FET Using Work Function Engineering. Microelectronic Engineering. 168 - 2017,67-75, .
          7. S. Singh, R. Sinha and P. N. Kondekar, Estimation of Analog/RF figures-of-merits & Circuit Performance of Dynamically Reconfigurable Electrostatically Doped Silicon Nanowire Schottky Barrier FET. Journal of Nanoelectronics and Optoelectronics . 12(4) - 2017,343-351, .
          8. S. Singh and P. N. Kondekar, A Novel Electrostatically Doped Ferroelectric Schottky Barrier Tunnel FET: Process Resilient Design. Journal of Computational Electronics. 16(3) - 2017,685-695, .
          9. S. Singh and P. N. Kondekar, Analytical Modeling of Schottky Tunneling Source Impact Ionization MOSFET With Reduced Breakdown Voltage. Engineering Science and Technology, an International Journal, Elsevier. 19(1) - 2016,421-428, .
          10. S. Singh, P. N. Kondekar and P. Pal, Transient Performance Estimation of Charge Plasma Based Negative Capacitance Junctionless Tunnel FET. Journal of Semiconductor, IOP. 37(1) - 2016,024003, .
          11. S. Singh and P. N. Kondekar, A novel process variation immune dopingless zero subthreshold slope and zero impact ionization FET (DL-Z2FET) based on transition metals. Journal of Computational Electronics. 15(1) - 2016,67-75, .
          12. S. Singh, P. N. Kondekar, and N. K. Jaiswal, Label-Free Biosensor using Nanogap Embedded Dielectric Modulated Schottky Tunneling Source Impact Ionization MOS. Microelectronic Engineering. 149 - 2016,129-134, .
          13. S. Singh, R. Sinha and P. N. Kondekar, A Novel Ultra Steep Dynamically Reconfigurable Electrostatically Doped Silicon Nanowire Schottky Barrier FET. Superlattices and Microstructure. 93 - 2016,40-49, .
          14. S. Singh and P. N. Kondekar, Schottky Tunneling Source Impact Ionization MOSFET (STS-IMOS) with Enhanced Device Performance. International Journal of VLSI design Communication Systems (VLSICS) . 6(3) - 2015,41-47, .
          15. S. Singh and P. N. Kondekar, Dopingless Impact Ionization MOS-A Remedy For Complex Process Flow. Journal of Semiconductor, IOP. 36(7) - 2015,074001, .
          16. S. Singh, P. N. Kondekar and P. Pal, Non-Hysteretic Behavior of Super Steep Ferroelectric Negative Capacitance Tunnel FET Based on Body Profile Engineering. Journal of low power electronics, (JOLPE). 11(4) - 2015,1-7, .
          17. S. Singh and P. N. Kondekar, A Novel Dynamically configurable Electrostatically Doped Silicon Nanowire Impact Ionization MOS. Superlattices and Microstructure. 88 - 2015,695-703, .
          18. A. Dixit, S. Singh, P. N. Kondekar, Ultra Thin Impact Ionization MOSFET (UTIMOS)- For Reduced Operating Voltage. Journal of Electron Devices. 19 - 2014,1663-1669, .
          19. S. Singh, P. Pal, P. N. Kondekar, , Charge-plasma-based super-steep negative capacitance junctionless tunnel field effect transistor: design and performance. IET Electronics Letters. 50(25) - 2014,1963-1964, .
          20. S. Singh and P. N. Kondekar, Dopingless Super-steep Impact Ionization MOS (Dopingless IMOS) Based on Work-function Engineering. IET Electronics Letters. 50(2) - 2014,888-889, .
          21. 16. M. Gupta, N. Gaur, P. Kumar, S. Singh, N. K. Jaiswal, P. N. Kondekar, Tailoring the electronic properties of a Z-shaped graphene field effect transistor via B/N doping. Physics Letters A. 379(7) - 2014,710-718, .
          22. P. Kumar and S. Singh, An optimized QCA-based reversible full adder: performance estimation for area efficiency and robustness. Journal of Computational Electronics. .
            International Conferences
            1. A. P. Singh, S. Singh, P. N. Kondekar, P. Jharia, P. Kumar, , Structural Analysis & Mathematical Modeling of Gate Inside Organic Field Effect Transistors (GI-OFET) - A Novel Device Structure, 4th Student’s Conference on Engineering and Systems.   - 2015, .
            2. S. Singh, A. P. Singh, P. N. Kondekar, Hetero Gate PNIN Tunnel Field Effect Transistor with enhance device performance, 4th Student’s Conference on Engineering and Systems.   - 2015, .
            3. A. Singh, S. Singh and P. N. Kondekar, Effect of Germanium Mole fraction Variation on Bipolar Charge Plasma Transistor,, 18th international workshop on physics of solid state devices, (IWPSD).   - 2015, .
            4. R. Sinha, S. Singh and P. N. Kondekar, , Silicon Nanowire Gate-All-Around Junctionless Tunnel FET with Bipolar Action, 18th international workshop on physics of solid state devices, (IWPSD).  IISc, Bangalore - 2015, .
            5. P. Kumar, S. Singh, N.P. Singh, B. Modi, and N. Gupta, , Germanium v/s silicon Gate-all-around junctionless nanowire transistor, , IEEE International Conference on Devices, Circuits and Systems (ICDCS).  1-5, - 2014, .
            6. P. Kumar, S. Singh, and P. N. Kondekar, , Transient Analysis & Performance Estimation of Gate Inside Junctionless Transistor (GI-JLT), 24th Great Lakes Symposium on VLSI, GLSVLSI, Houston, Texas, USA.  235-236, - 2014, .
            7. A. Dixit, S. Singh, P. N. Kondekar, , Transient Analysis of Lateral Impact Ionization MOSFET (LIMOS), IEEE International Conference for Convergence of Technology (I2CT), Pune 2014..   - 2014, .
            8. S. Singh, P. Kumar and P. N. Kondekar, , Transient Performance Analysis of Gate Inside Junctionless Transistor (GI-JLT), International Conference on Electronics, Biomedical Engineering and Applications (ICEBEA) on October, 2014 at Dubai, UAE organized by World Academy of Science Engineering and Technology.   - 2014, .
            9. S. Singh, P. Pal, R. Mittal, A. Tamia, P. N. Kondekar, , Silicon on Ferroelectric Tunnel FET (SOFTFET) for Low Power Application, IEEE International conference on Emerging electronics, pp.1-3, (ICEE-2014).  IISc, Bangalore - 2014, .
            10. D. Gupta, B. Modi, and S. Singh , QOS Constrained Routing Algorithm Using Directional Antenna”, 10th International Conference on Wireless and Optical Communications Networks (WOCN).   - 2013, .
            11. B. Modi, and S. Singh, , Multiband Channel Restoration Scheme for Opportunistic Spectrum Access in Cognitive Radio, Tenth International Conference on Wireless and Optical Communications Networks (WOCN), India.   - 2013, .
            12. P. Kumar, S. Singh, P. N. Kondekar and I. Agarwal, €�Characteristic and Sensitivity of Gate Inside Junctionless Transistor (GI-JLT), 20th IEEE International Conference on Electronics, Circuits, and Systems (ICECS-2013), UAE, pp.256-259, 2013.   - 2013, .
            13. A. Dixit, S. Singh, P. N. Kondekar, Pankaj Kumar, , Performance analysis of Lateral Impact Ionization MOS(LIMOS), IEEE Students’ Technology Symposium conference (Techsym) .   - 2013, .
            14. S. Singh, and A. Trivedi, , Anti-jamming in Cognitive Radio Networks Using Reinforcement Learning Algorithms, 9th International Conference on Wireless and Optical Communications Networks (WOCN), India.   - 2012, .
            15. P. Kumar, S. Singh, P. N. Kondekar, and A. Dixit, Digital and analog performance of gate inside p-type Junctionless transistor (GI-JLT),” , In IEEE 5th International Conference on Computational Intelligence, Modeling and Simulation (CIMSim2013), Seoul, Korea, pp. 394-397, .   - 2013, .