Faculty At Electronics And Communication Department



Pankaj Kumar
Pankaj Kumar
Assistant Professor
Basic Information Research Interest:-Semiconductor Device Modeling and Simulation,Emerging Devices, JLT, OFET, TFET, FinFET, VLSI Design, Metasurface/Metamaterial Devices, Terahertz Devices.
Email :- pankajjha@nitp.ac.in
Phone :-

Subjects Teaching in Department
  1. Semiconductor Devices and Circuits (UG)
  2. Analog Electronics (UG)
  3. MOS Device Physics and Modeling (PG)
  4. Semiconductor Materials, Devices & Characterization (PG)
  5. Elements of Electronic Engineering(UG)
Educational Qualification
  1. Ph.D. - National Institute of Technology Patna - Pursuing
  2. M.Tech (ECE) - Indian Institute of Information Technology, Jabalpur - 2014
  3. B.E.(ECE) - Ujjain Engineering College, Ujjain - 2011
    Journals
    1. Pankaj Kumar, Akhlesh Lakhtakia, and Pradip Kumar Jain, Tricontrollable pixelated metasurface for stopband for terahertz radiation. Journal of Electromagnetic Waves and Applications. , July - 2020,https://doi.org/10.1080/09205071.2020.1796825.
    2. Pankaj Kumar, Akhlesh Lakhtakia, and Pradip Kumar Jain, Tricontrollable pixelated metasurface for absorbing terahertz radiation. Applied Optics. 58 - 2019,9614-9623, Https://doi.org/10.1364/AO.58.009614.
    3. Pankaj Kumar, Akhlesh Lakhtakia, and Pradip Kumar Jain, Graphene pixel-based polarization-insensitive metasurface for almost perfect and wideband terahertz absorption. Journal of the Optical Society of America B. 36 - 2019,F84-F88, Https://doi.org/10.1364/JOSAB.36.001914.
    4. P. Kumar, S. Singh and P. N. Kondekar, Transient Analysis & Performance Estimation of Gate Inside Junctionless Transistor (GI-JLT). World Academy of Science, Engineering and Technology,International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering. 8(10) - 2014,1641-45, .
      International Conferences
      1. Pankaj Kumar, Akhlesh Lakhtakia, and Pradip Kumar Jain, Pixel-based metaatom design of graphene-metasurface absorber for terahertz waves, Proceedings of SPIE.  10917V, San Francisco, California, USA.,February - 2019, .
      2. P. Kumar, S. Singh and P. N. Kondekar, Transient Analysis & Performance Estimation of Gate Inside Junctionless Transistor (GI-JLT), 24th GLSVLSI .  Houston, Texas,May 21-23 - 2014, .
      3. P. Kumar, S. Singh, N. Gupta, B. Modi and N.P. Singh, Silicon v/s Germanium in Gate All Around Junctionless Nanowire Transistor (GAA-JLT), IEEE 2nd International Conference on Devices, Circuits and Systems (ICDCS-2014).  Tamil Nadu, India.,Mar 6-8 - 2013, .
      4. P. Kumar, C. Sahu, A. Shrivastava, P. N. Kondekar, and J. Singh, Characteristics of gate inside junctionless transistor with channel length and doping concentration, IEEE International conference on Electron Devices and Solid-State and Circuits (EDSSC13).  Hong Kong, Polytechnic University - 2013, .
      5. P. Kumar, S.Singh, P. N. Kondekar, and A. Dixit, Digital and analog performance of gate inside p-type junctionless transistor (GI-JLT), CIMSim2013, IEEE 5th International Conference on Computational Intelligence, Modeling and Simulation (CIMSim2013).  Seoul, Korea,Sep - 2013, .
      6. P. Kumar, S. Singh, P. N. Kondekar and I. Agarwal, Characteristic and Sensitivity of Gate Inside Junctionless Transistor (GI-JLT), 20th IEEE International Conference on Electronics, Circuits, and Systems (ICECS-2013).  Abu Dhabi, UAE,December 8-1 - 2013, .
      National Conferences
      1. A.P.Singh, S. Singh, P. N. Kondekar, A. Singh and P. Kumar, Structural Analysis Mathematical Modeling of Gate Inside Organic Field Effect Transistors (GI-OFET)- A Novel Device Structure, IEEE 4th Student’s Conference on Engineering and Systems .  MNNIT Allahabad, India., Nov 06-08 - 2015, .
      2. A. Dixit, S. Singh, P. N. Kondekar and P. Kumar, Parameter Optimizations of Lateral Impact MOS, IEEE Students’ Technology Symposium (IEEE TechSym 2014).  IIT Kharagpur, India,Feb - 2014, .