Worked as a FDP (Faculty Development Program) Coordinator under TEQIP Phase-III
N. Kamal, M. Panchore and J. Singh, 3-D Simulation of Junction- and Doping-Free Field-Effect Transistor Under Heavy Ion Irradiation. IEEE Transactions on Device and Materials Reliability. Vol. 18,, June - 2018,Pp. 173-179,, 10.1109/TDMR.2018.2811493.
Avinash Lahgere, Meena Panchore, Jawar Singh, Dopingless Ferroelectric Tunnel FET Architecture for the Improvement of Performance of Dopingless n-Channel Tunnel FETs”. Elsevier. Vol. 96,, Aug - 2016,pp. 16-25, 10.1016/j.spmi.2016.05.004,.
M. Panchore; J. Singh; S. P. Mohanty, Impact of Channel Hot Carrier Effect in Junction- and Doping-Free Devices and Circuits,”. IEEE Transactions on Electron Devices (TED. Vol. 63,(No. 12,), Dec - 2016,Pp. 5068-5071, 10.1109/TED.2016.2619621.
Meena Panchore, Jawar Singh, Saraju P. Mohanty, and Elias Kougianos,, Compact Behavioral Modeling and Time Dependent Performance Degradation Analysis of Junction and Doping Free Transistors for Analog Designs”,, ICCAD AMS. Austin, Texas,Nov - 2106, .
Meena Panchore, Jawar Singh, Saraju P. Mohanty, and Elias Kougianos, Compact Behavioral Modeling and Time Dependent Performance Degradation Analysis of Junction and Doping Free Transistors, IEEE-iNIS. IIITM Gwalior,Dec - 2016, .